Phantom exposure of chemically amplified resist in KrF excimer laser lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 6994-6998

  Kawai, Yoshio ^a   Deguchi, Kimiyoshi ^a   Nakamura, Jiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Acid; Ambient air; CD uniformity; Chemically amplified resist; Cross linking; KrF excimer laser; Lithography; Phantom exposure

Indexed keywords

EXCIMER LASERS; PHOTORESISTS;

CRITICAL DIMENSION (CD); PHANTOM EXPOSURE;

NANOTECHNOLOGY;

EID: 0033326756     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6994     Document Type: Article

References (2)

1. K. Deguchi, J. Nakamura, Y. Kawai, K. Nakanishi, I. Okada, M. Fukuda and M. Oda: to be published in J. Vac. Sci. Technol. (1999) SEP/OCT.
2. I. Okada, Y. Saitoh, K. Deguchi, M. Fukuda, H. Ban and T. Matsuda: Jpn. J. Appl. Phys. 37 (1998) 6808.