Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

Applied Optics

Volumn 48, Issue 18, 2009, Pages 3302-3307

  Naulleau, Patrick P ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; NUMERICAL METHODS; SEMICONDUCTOR DEVICES;

CRITICAL DIMENSION; EXTREME ULTRAVIOLETS; ILLUMINATION COHERENCES; LINE EDGE ROUGHNESS; LITHOGRAPHIC MASK; MODEL-BASED PREDICTION; NANO-METER REGIMES; NUMERICAL APERTURE;

ROUGHNESS MEASUREMENT;

EID: 67849114103     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.48.003302     Document Type: Article

References (9)

1. P. Naulleau and G. Gallatin, "The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization," Appl. Opt. 42, 3390-3397 (2003).
2. N. Beaudry and T. Milster, "Effects of mask roughness and condenser scattering in EUVL systems," Proc. SPIE 3676, 653-662 (1999).
3. P. Naulleau, "The relevance of mask-roughness-induced printed line-edge roughness in recent and future EUV lithography tests," Appl. Opt. 43, 4025-4032 (2004).
4. P. Naulleau, D. Niakoula, and G. Zhang, "System-level line-edge roughness limits in extreme ultraviolet lithography," J. Vac. Sci. Technol. B 26, 1289-1293 (2008).
5. P. Naulleau, K. Goldberg, E. Anderson, K. Bradley, R. Delano, P. Denham, B. Gunion, B. Harteneck, B. Hoef, H. Huang, K. Jackson, G. Jones, D. Kemp, A. Liddle, R. Oort, A. Rawlins, S. Rekawa, F. Salmassi, R. Tackaberry, C. Chung, L. Hale, D. Phillion, G. Sommargren, and J. Taylor, "Status of EUV microexposure capabilities at the ALS using the 0.3-NA MET optic," Proc. SPIE 5374, 881-891 (2004).
6. P. Naulleau, C. Anderson, J. Chiu, P. Denham, S. George, K. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, G. Jones, C. Koh, B. La Fontaine, A. Ma, W. Montgomery, D. Niakoula, J. Park, T. Wallow, and S. Wurm, "22-nm half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool," Microelectron. Eng. 86, 448-455 (2009).
7. SUMMIT.
8. P. Naulleau and G. Gallatin, "Spatial scaling metrics of mask-induced induced line-edge roughness," J. Vac. Sci. Technol. B 26, 1903-1910 (2008).
9. International Technology Roadmap for Semiconductors, "2006 update," http://www.itrs.net/Links/2008ITRS/Home2008.htm.