Post-annealed silicon nanocrystal formation on substoichiometric SiO xNy (x < 2, y < 1) layers deposited in SiH 4-N2O radiofrequency discharges

EPJ Applied Physics

Volumn 34, Issue 2, 2006, Pages 147-150

  Bedjaoui, M ^a   Despax, B ^a   Caumont, M ^a   Bonafos, C ^b  

^a Laboratoire Plasma et Conversion d'Energie   (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; THIN FILMS;

ANNEALED FILMS; OPTICAL CHARACTERIZATION; RADIOFREQUENCY DISCHARGES; SILICON NANOCRYSTALS;

SILICA;

EID: 33745639648     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2006050     Document Type: Conference Paper

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