Structure and electrical properties of BiFeO3 thin films grown on LaNiO3 electrode by chemical solution deposition

Journal of Alloys and Compounds

Volumn 500, Issue 1, 2010, Pages 46-48

  Zhang, Hailei ^a   Chen, Xinman ^a   Wang, Tao ^a   Wang, Feifei ^a   Shi, Wangzhou ^a  

^a SHANGHAI NORMAL UNIVERSITY   (China)

Author keywords

Electrical transport; Ferroelectrics; Sol gel processes; Surfaces and interfaces; Thin films

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; CHEMICAL SOLUTION DEPOSITION METHOD; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; ELECTRICAL TRANSPORT; IMPURITY PHASIS; REMANENT POLARIZATION; SPACE CHARGE LIMITED CONDUCTION; SURFACES AND INTERFACES; THERMALLY OXIDIZED SILICON;

CHEMICALS; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; GELS; NANOSTRUCTURED MATERIALS; SILICON OXIDES; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

VAPOR DEPOSITION;

EID: 77953139737     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.03.192     Document Type: Article

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