Electric properties of BiFeO3 films deposited on LaNiO 3 by sol-gel process

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Liu, Zuli ^a   Liu, Hongri ^a   Du, Guihuan ^a   Zhang, Jian ^a   Yao, Kailun ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; LANTHANUM COMPOUNDS; PERMITTIVITY; POLARIZATION; SOL-GELS;

ANNEALING TEMPERATURES; BREAKDOWN ELECTRIC FIELD; PREPARATION TECHNOLOGY; REMNANT POLARIZATION;

THIN FILMS;

EID: 33748310879     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335399     Document Type: Article

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