Systematic investigation of interface properties in 4H-SiC MOS structures prepared by over-oxidation of ion-implanted substrates

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 495-498

  Okamoto, D ^a   Yano, H ^a   Hatayama, T ^a   Fuyuki, T ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Interface state density; Ion implantation; MOS interface; Over oxidation

Indexed keywords

DIELECTRIC DEVICES; ION IMPLANTATION; IONS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SILICON OXIDES; THERMOOXIDATION; WIDE BAND GAP SEMICONDUCTORS;

CONDUCTION BAND EDGE; INTERFACE PROPERTY; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS INTERFACE; OVEROXIDATIONS; SIO2/SIC INTERFACE; THERMAL OXIDATION;

INTERFACE STATES;

EID: 77953011084     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.495     Document Type: Conference Paper

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