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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 24, 2002, Pages 2453051-24530511

Mechanism of dopant segregation to SiO2/Si(001) interfaces

(5) Dabrowski, J a Mussig H J a Zavodinsky, V b Baierle, R c Caldas, M J d

a IHP (Germany)

b INSTITUTE OF AUTOMATION AND CONTROL PROCESSES (Russian Federation)

c FEDERAL UNIVERSITY OF SANTA MARIA (Brazil)

d UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS; SILICON; SILICON DIOXIDE;

AB INITIO CALCULATION; ARTICLE; CALCULATION; CHEMICAL BOND; DIFFUSION; OXIDATION;

EID: 0037098426 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.65.245305 Document Type: Article

Times cited : (52)

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