High channel mobility of 4H-SiC MOSFETs fabricated by over-oxidation of the N-/Al-coimplanted surface layer

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 765-768

  Reshanov, S A ^a   Beljakowa, S ^a   Frank, T ^a   Zippelius, B ^a   Krieger, M ^a   Pensl, G ^a   Noborio, M ^b   Kimoto, T ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Channel mobility; Density of interface states; Hall effect; MOSFET; N Al coimplantation

Indexed keywords

ALUMINUM COMPOUNDS; FABRICATION; HALL EFFECT; INTERFACE STATES; MOSFET DEVICES; SILICON CARBIDE; THRESHOLD VOLTAGE;

4H-SIC MOSFETS; CHANNEL MOBILITY; CONVENTIONAL MOSFETS; DENSITY OF INTERFACE STATE; EFFECTIVE ELECTRON MOBILITY; INTERFACE TRAPS; MOS-FET; SURFACE LAYERS;

HALL MOBILITY;

EID: 77955460967     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.765     Document Type: Conference Paper

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