Ab initio theoretical study of an oxygen vacancy defect at the 4H-SiC (0001) / SiO2 interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 11, 2009, Pages

  Okuno, Eiichi ^a   Sakakibara, Toshio ^a   Onda, Shoichi ^a   Itoh, Makoto ^b   Uda, Tsuyoshi ^b  

^a DENSO CORPORATION   (Japan)

^b ADVANCESOFT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65249190770     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.113302     Document Type: Article

References (22)

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