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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5214-5219

Dielectric properties of hydrogen silsesquioxane films degraded by heat and plasma treatment

(4) Chung, Sung Woong a Shin, Joo Han a Park, Nae Hak a Park, Jin Won a

Author keywords

Heat treatment; Hydrogen silsesquioxane; Intermetal dielectric; Low dielectric constant; Oxygen plasma; Semiconductor; Spin on glass

Indexed keywords

CAPACITANCE MEASUREMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; HYDROGEN INORGANIC COMPOUNDS; PERMITTIVITY; PLASMA APPLICATIONS; POLARIZATION; PYROLYSIS; REFRACTIVE INDEX; THERMODYNAMIC STABILITY; VOLTAGE MEASUREMENT;

HYDROGEN SILSESQUIOXANE; INTERMETAL DIELECTRICS; SPIN-ON-GLASS (SOG) MATERIALS;

DIELECTRIC FILMS;

EID: 0033339220 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.5214 Document Type: Article

Times cited : (28)

References (13)

1
- 33744725541
- S. W. Chung, J. W. Kim, D. W. Sun, N. H. Park, J. W. Park and J. J. Kim Proc. 4ih Int. Dielectric VLSI Multilevel Interconnection Conf., 1998, p. 151.
- (1998) Proc. , vol.4 , pp. 151
- Chung, S.W.¹ Kim, J.W.² Sun, D.W.³ Park, N.H.⁴ Park, J.W.⁵ Kim, J.J.⁶

2
- 0013258660
- J. Waelerloos, H. Meynen, B. Coencrachts, T. Gao, J. Grillaert and L. Van den hovc Proc. 3rd Int. Dielectric ULS1 Multilevel Interconnection Conf., 1997, p. 310.
- (1997) Proc. 3rd Int. Dielectric ULSI Multilevel Interconnection Conf. , pp. 310
- Waelerloos, J.¹ Meynen, H.² Coencrachts, B.³ Gao, T.⁴ Grillaert, J.⁵ Van Den Hovc, L.⁶

3
- 33744774465
- J. Goo, B. K. Hwang, H. H. Choi, U.-I. Chung and Y. B. Kon Proc. 3rd Im. Dielectric ULSI Multilevel Interconnection Conf., 1997, f. 329.
- (1997) Proc. , vol.3 , pp. 329
- Goo, J.¹ Hwang, B.K.² Choi, H.H.³ Chung, U.-I.⁴ Kon, Y.B.⁵

4
- 0030649235
- N. Oda, T. Usami, K. Kishimoto, A. Matsumoto, K. Mikagi, K. Kikuta, H. Gomi and I. Sakai Symp. VLSI Tech., Kyoto, Japan, 1997, p. 79.
- Symp. VLSI Tech., Kyoto, Japan , vol.1997 , pp. 79
- Oda, N.¹ Usami, T.² Kishimoto, K.³ Matsumoto, A.⁴ Mikagi, K.⁵ Kikuta, K.⁶ Gomi, H.⁷ Sakai, I.⁸

5
- 33744771941
- F. Pires, G. Passemard, P. Noel and Ch. Lecornec Proc. 4th Int. Dielectric VLSI Multilevel Interconnection Conf, 199S,p. 133.
- Proc. , vol.4 , pp. 199
- Pires, F.¹ Passemard, G.² Noel, P.³ Lecornec, Ch.⁴

6
- 0343134172
- I. Goswami and M. J. Loboda Proc. 14lh Int. VLSI Multilevel Interconnection Conf, 1997, p. 632.
- (1997) Proc. 14lh Int. VLSI Multilevel Interconnection Conf , pp. 632
- Goswami, I.¹ Loboda, M.J.²

7
- 0032135966
- M. H. Loboda, C. M. Grove and R. F. Schneider J. Electrochem. Soc. 145(1998)2861.
- (1998) J. Electrochem. Soc. , vol.145 , pp. 2861
- Loboda, M.H.¹ Grove, C.M.² Schneider, R.F.³

8
- 0031207157
- C. Vallée, A. Goullel, F. Nicolazo, A. Granier and G. Turban J. NonCryst. Solids 216 (1997) 48.
- (1997) J. NonCryst. Solids , vol.216 , pp. 48
- Vallée, C.¹ Goullel, A.² Nicolazo, F.³ Granier, A.⁴ Turban, G.⁵

9
- 33645042211
- M. M. T. Anki and B. Lefez Appl. Opt. 35 (1996) 1339.
- (1996) Appl. Opt. , vol.35 , pp. 1339
- Anki, M.M.T.¹ Lefez, B.²

10
- 0010762190
- J. P. Hawranek, P. Neelakanlan, R. P. Young and R. N. Joncs Spcctrochem. Ada 32 (1976) 75.
- (1976) Spcctrochem. Ada , vol.32 , pp. 75
- Hawranek, J.P.¹ Neelakanlan, P.² Young, R.P.³ Joncs, R.N.⁴

11
- 0002998173
- J. P. Hawranck, P. Ncelakantan, R. P. Young and R. N. Joncs Spectrochem.Acia32(1976)85.
- (1976) Spectrochem.Acia , vol.32 , pp. 85
- Hawranck, J.P.¹ Ncelakantan, P.² Young, R.P.³ Joncs, R.N.⁴

12
- 0031191858
- S. W. Lim, Y. Shimogaki, Y. Nakano, K. Tada and H. Komiyama J. Electrochem. Soc. 144 (1997) 2531. 13)
- (1997) J. Electrochem. Soc. , vol.144 , pp. 2531
- Lim, S.W.¹ Shimogaki, Y.² Nakano, Y.³ Tada, K.⁴ Komiyama, H.⁵

13
- 58149363996
- H. R. Zelsmann J. Mol. Struct. 350 (1995) 95.
- (1995) J. Mol. Struct. , vol.350 , pp. 95
- Zelsmann, H.R.¹

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