Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high- k dielectrics for nonvolatile memories

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Yang, Chia Han ^a,b   Kuo, Yue ^a   Lin, Chen Han ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

^b University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DE-TRAPPING; DIELECTRIC BREAKDOWNS; HIGH GATE BIAS; HIGH-K DIELECTRIC; MEMORY DEVICE; NANOCRYSTALLINES; NON-VOLATILE MEMORIES; POLARITY CHANGE; STRESS VOLTAGES;

DIELECTRIC FILMS; ELECTRIC BREAKDOWN; HAFNIUM; NANOCRYSTALS; ZINC; ZINC OXIDE; ZIRCONIUM;

HAFNIUM OXIDES;

EID: 77952983105     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3429590     Document Type: Article

References (22)

1. The International Technology Roadmap for Semiconductors. Semiconductor Industry Association, December (2003).
2. C. Hu, Nanotechnology NNOTER 0957-4484 10, 113 (1999). 10.1088/0957-4484/10/2/301
3. J. J. Lee, X. Wang, W. Bai, N. Lu, and D. -L. Kwong, IEEE Trans. Electron Devices IETDAI 0018-9383 50, 2067 (2003). 10.1109/TED.2003.816107
4. J. Lu, Y. Kuo, J. Yan, and C. -H. Lin, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 45, L901 (2006). 10.1143/JJAP.45.L901 (Pubitemid 44411438)
5. Y. Kuo, J. Lu, S. Chatterjee, J. Yan, T. Yuan, H. -C. Kim, W. Luo, J. Peterson, and M. Gardner, ECS Trans. ECSTF8 1938-5862 1 (5), 447 (2006). 10.1149/1.2209294
6. D. Triyoso, ECS Trans. ECSTF8 1938-5862 3 (3), 463 (2006). 10.1149/1.2355735
7. Y. Kuo, ECS Trans. ECSTF8 1938-5862 3 (3), 253 (2006). 10.1149/1.2355717
8. Y. Kuo, ECS Trans. ECSTF8 1938-5862 2 (1), 13 (2006).
9. J. Yan, Y. Kuo, and J. Lu, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10, H199 (2007). 10.1149/1.2730720 (Pubitemid 46753033)
10. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabb́, and K. Chan, Appl. Phys. Lett. APPLAB 0003-6951 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
11. J. Lu, C. -H. Lin, and Y. Kuo, J. Electrochem. Soc. JESOAN 0013-4651 155, H386 (2008). 10.1149/1.2901059 (Pubitemid 351623466)
12. D. B. Farmer and R. G. Gordon, J. Appl. Phys. JAPIAU 0021-8979 101, 124503 (2007). 10.1063/1.2740351 (Pubitemid 47141370)
13. B. De Salvo, G. Ghibaudo, G. Pananakakis, P. Masson, T. Baron, N. Buffet, A. Fernandes, and B. Guillaumot, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 1789 (2001). 10.1109/16.936709 (Pubitemid 32732764)
14. J. De Blauwe, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 1, 72 (2002). 10.1109/TNANO.2002.1005428 (Pubitemid 43987437)
15. W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, Appl. Phys. Lett. APPLAB 0003-6951 89, 072901 (2006). 10.1063/1.2335624 (Pubitemid 44259954)
16. J. R. Jameson, W. Harrison, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett. APPLAB 0003-6951 84, 3489 (2004). 10.1063/1.1738177
17. C. H. Yang, Y. Kuo, R. Wan, C. -H. Lin, and W. Kuo, Intl. Rel. Phys. Symp. 2008, 46. 0002-7820
18. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectrics, London, 1983).
19. H. Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, U. Schroder, H. Seidl, and D. Schumann, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2001, 267.
20. Z. Xu, L. Pantisano, A. Kerber, R. Degraeve, E. Cartier, S. De Gendt, M. Heyns, and G. Groeseneken, IEEE Trans. Electron Devices IETDAI 0018-9383 51, 402 (2004). 10.1109/TED.2003.822343
21. W. Luo, Y. Kuo, and W. Kuo, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 4, 488 (2004). 10.1109/TDMR.2004.836161 (Pubitemid 40049427)
22. H. Satake and A. Toriumi, IEEE Trans. Electron Devices IETDAI 0018-9383 47, 741 (2000). 10.1109/16.830988 (Pubitemid 30588101)