Dielectric breakdown mechanism of thin-SiO2 studied by the post-breakdown resistance statistics

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 741-745

  Satake, Hideki ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC LOSSES; ELECTRIC RESISTANCE; RELIABILITY; STATISTICAL METHODS;

DIELECTRIC BREAKDOWN; GATE ELECTRON INJECTION; POST-BREAKDOWN RESISTANCE;

MOSFET DEVICES;

EID: 0033878638     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830988     Document Type: Article

References (10)

1. K. Naruke, S. Taguchi, and M. Wada, Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness, in IEDM Tech. Dig., 1988, p. 424.
2. 2 films, J. Electrochem. Soc., vol. 140, p. 770, 1993.
3. L. K. Han et al., Polarity dependence of dielectric breakdown in scaled SiO2, in IEDM Tech. Dig., 1994, p. 617.
4. 2/Si interface structures and reliability characteristics, J. Electrochem. Soc., vol. 142, p. 273, 1995.
5. H. Satake, N. Yasuda, S. Takagi, and A. Toriumi, Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides, Appl. Phys. Lett., vol. 69, p. 1128, 1996.
6. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides, in IEDM Tech. Dig., 1995, p. 863.
7. T. Tanamoto and A. Toriumi, A percolation approach to dielectric breakdown statistics, Jpn. J. Appl. Phys., vol. vol. 36, p. 1439, 1997.
8. T. Sakura, H. Utsunomiya, Y. Kamakura, and K. Taniguchi, A detailed study of soft- and pre-soft-breakdowns in small geometry MOS structures, in IEDM Tech. Dig., 1998, p. 183.
9. J. C. Jackson, T. Robinson, O. Oralkan, and D. J. Dumin, Nonuniqueness of time-dpendent-dielectric-breakdown distributions, Appl. Phys. Lett., vol. 70, p. 3682, 1997.
10. F. Crupi et al, On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers, IEEE Trans. Electron Devices, vol. 45, p. 2329, 1998.