Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Nanotechnology

Volumn 19, Issue 27, 2008, Pages

  Yang, L ^a   Motohisa, J ^b   Tomioka, K ^b   Takeda, J ^b   Fukui, T ^b   Geng, M M ^a   Jia, L X ^a   Zhang, L ^a   Liu, Y L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM ALLOYS; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; METALS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; PHOTOLUMINESCENCE; ROTATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STANDARDS;

BAND FILLINGS; DENSITY-DEPENDENT; DIFFUSION LENGTHS; EXCITATION POWER DENSITY; INGAAS/GAAS; METAL ORGANIC VAPOR PHASE EPITAXY (MOVPE); MICROPHOTOLUMINESCENCE (MICRO PL); NANO-PILLARS; QUANTUM WELLS; STANDARD DEVIATION (STD); ZINC BLENDE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

NANOMATERIAL;

ARTICLE; ELECTRON DIFFRACTION; EXCITATION; MATHEMATICAL MODEL; PHOTOLUMINESCENCE; PIEZOELECTRICITY; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 48249117152     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/27/275304     Document Type: Article

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