Nanometre-sized GaAs wires grown by organo-metallic vapour-phase epitaxy

Nanotechnology

Volumn 17, Issue 11, 2006, Pages

  Hiruma, Kenji ^a   Haraguchi, Keiichi ^a   Yazawa, Masamitsu ^a   Madokoro, Yuuichi ^a   Katsuyama, Toshio ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CATALYSTS; DEPOSITION; EVAPORATION; GALLIUM COMPOUNDS; GOLD; ION BEAMS; ION IMPLANTATION; LIGHT POLARIZATION; SILICON; SUBSTRATES; VACUUM APPLICATIONS; VAPOR PHASE EPITAXY; WIRE;

FOCUSED ION BEAM; GROWTH CATALYST; NANOWIRES; ORGANO-METALLIC VAPOUR-PHASE EPITAXY;

NANOSTRUCTURED MATERIALS;

EID: 33744517455     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/11/S23     Document Type: Article

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