InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application

Nanotechnology

Volumn 14, Issue 10, 2003, Pages 1071-1074

  Akabori, Masashi ^a   Takeda, Junichiro ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

NANOPILLAR ARRAY FORMATION; PHOTONIC CRYSTAL APPLICATION; SELECTIVE AREA METAL ORGANIC VAPOR PHASE EPITAXIAL GROWTH;

NANOSTRUCTURED MATERIALS;

EID: 0142155079     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/10/303     Document Type: Article

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