The impact of short channel and quantum effects on the MOS transistor mismatch

Solid-State Electronics

Volumn 47, Issue 7 SPEC., 2003, Pages 1161-1165

  Difrenza, R ^a,b   Llinares, P ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

Fluctuations; Matching; MOS transistor; Quantum effect; Short channel effect; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); GATES (TRANSISTOR); QUANTUM ELECTRONICS; THRESHOLD VOLTAGE;

SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0037741862     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00033-9     Document Type: Conference Paper

References (11)

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