Fabrication of Na-N codoped p-type ZnO films by RF reactive magnetron sputtering and post-annealing

Faguang Xuebao/Chinese Journal of Luminescence

Volumn 31, Issue 2, 2010, Pages 199-203

  Lin, Lan ^a   Ye, Zhi Zhen ^a   Gong, Li ^a   Bie, Xun ^a   Lu, Jian Guo ^a   Zhao, Bing Hui ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Na N co doping; P type ZnO films; Post annealing; RF reactive magnetron sputtering

Indexed keywords

CO-DOPED; CO-DOPING; CRYSTALLINITIES; DIFFRACTION PEAKS; ELECTRICAL PROPERTY; GLASS SUBSTRATES; HALL MEASUREMENTS; P TYPE ZNO; P-TYPE BEHAVIORS; P-TYPE CONDUCTIVITY; P-TYPE ZNO FILM; POST ANNEALING; PREFERENTIAL ORIENTATION; RF REACTIVE MAGNETRON SPUTTERING; XPS MEASUREMENTS; ZNO;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MAGNETRON SPUTTERING; METALLIC FILMS; SODIUM; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING;

EID: 77952659223     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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