The effect of carrier gas H2 used during MOCVD-growth on the properties of N-doped ZnO

Chinese Journal of Luminescence

Volumn 29, Issue 3, 2008, Pages 441-446

  Liu, Xue Dong ^a   Gu, Shu Lin ^a   Li, Feng ^a   Zhu, Shun Ming ^a   Liu, Wei ^a   Ye, Jian Dong ^a   Shan, Zheng Ping ^a   Liu, Shao Bo ^a   Tang, Kun ^a   Zhu, Guang Yao ^a   Zhang, Rong ^a   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Carrier gas; Ionization; Metal organic chemical vapor deposition; ZnO

Indexed keywords

EID: 48949116542     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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