Roles of hydrogen and nitrogen in p-type doping of ZnO

Chemical Physics Letters

Volumn 441, Issue 1-3, 2007, Pages 68-71

  Lu, J G ^a   Fujita, S ^a   Kawaharamura, T ^a   Nishinaka, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DIFFUSION; DOPING (ADDITIVES); NITROGEN; ZINC OXIDE;

DISSOCIATED HYDROGEN; P-TYPE CONDUCTIVITY;

HYDROGEN;

EID: 34249746673     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2007.04.085     Document Type: Article

References (25)

1. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Appl. Phys. Lett. 72 (1998) 3270
2. Kim K.K., et al. J. Appl. Phys. 97 (2005) 066103
3. Lu J.G., et al. J. Appl. Phys. 100 (2006) 073714
4. Park C.H., Zhang S.B., and Wei S.H. Phys. Rev. B 66 (2002) 073202
5. Minegishi K., Koiwai Y., Kikuchi Y., Yano K., Kasuga M., and Shimizu A. Jpn. J. Appl. Phys. 36 (1997) L1453
6. Lee E.C., Kim Y.S., Jin Y.G., and Chang K.J. Phys. Rev. B 64 (2001) 085120
7. Look D.C., Reynolds D.C., Litton C.W., Jones R.L., Eason D.B., and Cantwell G. Appl. Phys. Lett. 81 (2002) 1830
8. Georgobiani A.N., Gruzintsev A.N., Volkov V.T., and Vorob'ev M.O. Semiconductors 36 (2002) 265
9. Ye Z.Z., Lu J.G., Chen H.H., Zhang Y.Z., Wang L., Zhao B.H., and Huang J.Y. J. Cryst. Growth 253 (2003) 258
10. Lu J.G., Zhang Y.Z., Ye Z.Z., Wang L., Zhao B.H., and Huang J.Y. Mater. Lett. 57 (2003) 3311
11. Wang L.G., and Zunger A. Phys. Rev. Lett. 90 (2003) 256401
12. Garces N.Y., Wang L.J., Giles N.C., Halliburton L.E., Cantwell G., and Eason D.B. J. Appl. Phys. 94 (2003) 519
13. Lu J.G., Ye Z.Z., Zhuge F., Zeng Y.J., Zhao B.H., and Zhu L.P. Appl. Phys. Lett. 85 (2004) 3134
14. Li X.N., et al. Appl. Phys. Lett. 86 (2005) 122107
15. Keyes B.M., Gedvilas L.M., Li X., and Coutts T.J. J. Cryst. Growth 281 (2005) 297
16. Lu J.G., et al. J. Cryst. Growth 283 (2005) 413
17. Chen L.L., et al. Appl. Phys. Lett. 87 (2005) 252106
18. Nakano Y., Morikawa T., Ohwaki T., and Taga Y. Appl. Phys. Lett. 88 (2006) 172103
19. Neugebauer J., and Van de Walle C.G. Appl. Phys. Lett. 68 (1996) 1829
20. Sugiura L., Suzuki M., and Nishio J. Appl. Phys. Lett. 72 (1998) 1748
21. Lu J.G., Fujita S., Kawaharamura T., Nishinaka H., Kamada Y., and Ohshima T. Appl. Phys. Lett. 89 (2006) 262107
22. Lu J.G., Kawaharamura T., Nishinaka H., Kamada Y., Ohshima T., and Fujita S. J. Cryst. Growth 299 (2007) 1
23. Lee E.C., and Chang K.J. Phys. Rev. B 70 (2004) 115210
24. Ip K., et al. Appl. Phys. Lett. 81 (2002) 3996
25. Wilson R.G., Pearton S.J., Abernathy C.R., and Zavada J.M. J. Vac. Sci. Technol. A 13 (1995) 719