Hydrogen-assisted nitrogen-acceptor doping in ZnO

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 8, 2008, Pages 1975-1977

  Lu, J G ^a,b   Fujita, S ^a  

^a KYOTO UNIVERSITY   (Japan)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; ANNEALED SAMPLES; ANNEALING PROCESSES; ANNEALING TREATMENTS; CRYSTALLINITY; HIGH RESISTIVITIES; IN BANDS; N FILMS; N-DOPED; THIN-FILMS; ZNO FILMS;

ABSORPTION; ANNEALING; ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); HOLE CONCENTRATION; HYDROGEN; METALLIC FILMS; SEMICONDUCTOR MATERIALS; THICK FILMS; ZINC ALLOYS; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 54249089402     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778867     Document Type: Conference Paper

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