Properties of N-doped ZnO thin films in annealing process

Solid State Communications

Volumn 143, Issue 11-12, 2007, Pages 562-565

  Zhang, Yinzhu ^a   Lu, Jianguo ^a,b   Chen, Lanlan ^a,c   Ye, Zhizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b KYOTO UNIVERSITY   (Japan)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A. Thin films; B. Thermal annealing; C. Impurities in semiconductors; D. Electrical properties

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; ZINC OXIDE;

DOPING SOURCES; HYDROGEN PASSIVATION EFFECTS; THERMAL ANNEALING;

THIN FILMS;

EID: 34548010030     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.07.004     Document Type: Article

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