Fabrication of ferroelectric pzt thin films by liquid delivery MOCVD using novel Zr and Ti precursors

Integrated Ferroelectrics

Volumn 104, Issue 1, 2008, Pages 16-24

  Yeh, C P ^a   Lisker, M ^a   Vezin, V ^b   Seitzinger, B ^b   Baumann, P K ^b   Garke, B ^a   Blasing J ^a   Krost, A ^a   Burte, E P ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

Ferroelectric; Liquid delivery; MOCVD; PZT; Ti(OiPr)2(mmp)2; Zr(OiPr)2 (mmp)2

Indexed keywords

COERCIVE FIELD; FERROELECTRIC LIQUID; FERROELECTRIC PROPERTY; LIQUID DELIVERY MOCVD; LIQUID DELIVERY SYSTEMS; METALORGANIC CHEMICAL VAPOR DEPOSITION; METHOXY; MIXED-LIGANDS; PB(ZR ,TI)O3; PROCESS TEMPERATURE; PZT; PZT FILM; PZT THIN FILM; REMANENT POLARIZATION; TETRAMETHYL; TI PRECURSOR;

DEPOSITION; FERROELECTRICITY; LEAD; LIQUIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE MINERALS; PEROVSKITE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; SEMICONDUCTING LEAD COMPOUNDS; THIN FILMS; TITANIUM; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 77951675044     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802554737     Document Type: Conference Paper

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