Preparing Pb (Zr,Ti) O3 films less than 100 nm thick by low-temperature metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

  Nagai, A ^a   Morioka, H ^a   Asano, G ^a   Funakubo, H ^a   Saiki, A ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTALLINE MATERIALS; ELECTRODES; FERROELECTRIC MATERIALS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THICK FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; ELECTRONIC PRODUCTS; FERROELECTRIC FILMS; REMANENT POLARIZATION;

LEAD COMPOUNDS;

EID: 17444375265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1899770     Document Type: Article

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