Sub-1.2V operational, 0.15μm/12F2 Cell FRAM technologies for next generation SoC applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 102-103

  Kang, Y M ^a   Kim, J H ^a   Joo, H J ^a   Kang, S K ^a   Rhie, H S ^a   Park, J H ^a   Choi, D Y ^a   Oh, S G ^a   Koo, B J ^a   Lee, S Y ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; MASKS; MICROPROCESSOR CHIPS; SEMICONDUCTING SILICON;

AL2O3; CELL SIZE; FERROELECTRIC CAPACITOR; HYDROGEN DAMAGE;

RANDOM ACCESS STORAGE;

EID: 33745176261     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469229     Document Type: Conference Paper

References (9)

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7. Y. Horii et al., IEDM Tech. Dig., p539, 2002
8. H. Kanaya et al., Symp. on VLSI Tech. Dig., p150, 2004
9. H. McAdams et al., Symp. on VLSI Circuits Dig., p175, 2003