A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4558-4560

  Fang, C Y ^a   Lin, C F ^a   Chang, Edward Yi ^a   Feng, M S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; BAND-EDGE EMISSIONS; DOPING CONCENTRATION; INTER-BAND TRANSITION; LOW TEMPERATURES; LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY; METAL-ORGANIC; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; RED SHIFT; ROOM TEMPERATURE; SPACER THICKNESS; SUB-BANDS; TEMPERATURE VARIATION; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

GALLIUM; GALLIUM NITRIDE; HALL MOBILITY; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79956003382     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1485310     Document Type: Article

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