Detailed arsenic concentration profiles at Si/ SiO2 interfaces

Journal of Applied Physics

Volumn 104, Issue 4, 2008, Pages

  Pei, Lirong ^a,i   Duscher, Gerd ^a,b   Steen, Christian ^c,j   Pichler, Peter ^c,d   Ryssel, Heiner ^c,d   Napolitani, Enrico ^e   De Salvador, Davide ^e   Piro, Alberto Maria ^f   Terrasi, Antonio ^f   Severac, Fabrice ^g   Cristiano, Filadelfo ^g   Ravichandran, Karthik ^h   Gupta, Naveen ^h   Windl, Wolfgang ^h  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^d FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^e UNIVERSITY OF PADOVA   (Italy)

^f UNIVERSITY OF CATANIA   (Italy)

^g UNIVERSITÉ DE TOULOUSE   (France)

^h Ohio State University   (United States)

ⁱ INTEL CORPORATION   (United States)

^j Lineas Automotive GmbH   (Germany)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CONCENTRATION (PROCESS); GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MAGNETIC FIELD EFFECTS; MASS SPECTROMETRY; MEDICAL IMAGING; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPECTROMETERS; SPECTROMETRY; SPECTRUM ANALYSIS;

ELECTRON ENERGY-LOSS SPECTROSCOPY; GRAZING-INCIDENCE; HIGH RESOLUTIONS; Z-CONTRAST IMAGING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 50849107358     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967713     Document Type: Article

References (34)

1. G. A. Sai-Halasz, K. T. Short, and J. S. Williams, IEEE Electron Device Lett. 0741-3106 10.1109/EDL.1985.26127 6, 285 (1985).
2. K. Shibahara, H. Furumoto, K. Egusa, M. Koh, and S. Yokoyama, in Silicon Front-End Technology-Materials Processing and Modelling, edited by, N. E. B. Cowern, D. C. Jacobson, P. B. Griffen, P. A. Packan, and, R. P. Webb, MRS Symposia Proceedings No. 532 (Materials Research Society, Pittsburgh, 1998), p. 23.
3. Y. Sato, J. Nakata, K. Imai, and E. Arai, J. Electrochem. Soc. 0013-4651 10.1149/1.2044117 142, 655 (1995).
4. R. Kasnavi, Y. Sun, R. Mo, P. Pianetta, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 0021-8979 10.1063/1.372169 87, 2255 (2000).
5. J. A. Van den Berg, D. G. Armour, S. Zhang, S. Whelan, H. Ohno, T. -S. Wang, A. G. Cullis, E. H. J. Collart, R. D. Goldberg, P. Bailey, and T. C. Q. Noakes, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1477420 20, 974 (2002).
6. C. Steen, A. Martinez-Limia, P. Pichler, H. Ryssel, S. Paul, W. Lerch, L. Pei, G. Duscher, F. Severac, F. Cristiano, and W. Windl, J. Appl. Phys. 104, 023518 (2008).
7. S. J. Pennycook and D. E. Jesson, Ultramicroscopy 0304-3991 10.1016/0304-3991(91)90004-P 37, 14 (1991).
8. G. Duscher, R. Buczko, S. J. Pennycook, and S. T. Pantelides, Ultramicroscopy 0304-3991 10.1016/S0304-3991(00)00126-1 86, 355 (2001).
9. C. Steen, A. Nutsch, P. Pichler, and H. Ryssel, Spectrochim. Acta, Part B 0584-8547 10.1016/j.sab.2007.04.010 62, 481 (2007).
10. N. S. Bennett, A. J. Smith, B. Colombeau, R. Gwilliam, N. E. B. Cowern, and B. J. Sealy, Mater. Sci. Eng., B 124-125, 305 (2005).
11. U. Weisbrod, R. Gutschke, J. Knoth, and H. Schwenke, Appl. Phys. A 0721-7250 10.1007/BF00348161 53, 449 (1991).
12. F. M. Smits, Bell Syst. Tech. J. 37, 711 (1958). 0005-8580
13. L. J. van der Pauw, Philips Res. Rep. 13, 1 (1958).
14. P. Blood and J. W. Orten, The Electrical Characterization of Semiconductors: Majority Carriers and Electon States, Techniques of Physics Vol. 14 (Academic, London, 1992), pp. 126-130.
15. R. F. Egerton, in Electron Energy-Loss Spectroscopy in the Electron Microscope, 2nd ed. (Plenum, New York, 1996), p. 280.
16. N. Stoddard, G. Duscher, W. Windl, and G. Rozgonyi, J. Mater. Sci. 0022-2461 10.1007/s10853-005-1059-z 40, 3639 (2005).
17. M. Ramamoorthy and S. T. Pantelides, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.76.4753 76, 4753 (1996).
18. P. Pichler, Intrinsic Point Defects, Impurities, and their Diffusion in Silicon (Springer, Wien, 2004), Chap..
19. W. Windl, L. Pei, G. Duscher, C. Steen, P. Pichler, H. Ryssel, G. Bisognin, E. Napolitani, F. Severac, and F. Cristiano (unpublished).
20. J. H. Mazur, R. Gronsky, and J. Washburn, in Microscopy of Semiconducting Materials, Institute Physics Conference Series Vol. 67, edited by, A. G. Cullis, S. M. Davidson, and, G. R. Booker, (Institute of Physics, Bristol, 1983), p. 77.
21. D. A. Cole, J. R. Shallenberger, S. W. Novak, R. L. Moore, M. J. Edgell, S. P. Smith, C. J. Hitzman, J. F. Kirchhoff, E. Principe, W. Nieveen, F. K. Huang, S. Biswas, R. J. Bleiler, and K. Jones, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.591208 18, 440 (2000).
22. W. Windl, T. Liang, S. Lopatin, and G. Duscher, Mater. Sci. Eng., B 114-115, 156 (2004).
23. Handbook of X-Ray Photoelectron Spectroscopy, edited by, J. Chastain, (Perkin Elmer, Eden Prairie, MN, 1992).
24. N. Gupta and W. Windl, in Doping Engineering for Front-End Processing, MRS Proceedings Vol. 1070, edited by, M. Law, B. J. Pawlak, M. L. Pelaz, and, K. Suguro, (Materials Research Society, Pittsburgh, PA, 2008), Paper No. 1070-E06-03.
25. J. C. Irvin, Bell Syst. Tech. J. 41, 387 (1962). 0005-8580
26. R. Galloni and A. Sardo, Rev. Sci. Instrum. 0034-6748 10.1063/1.1137376 54, 369 (1983).
27. G. Masetti, M. Severi, and S. Solmi, IEEE Trans. Electron Devices 0018-9383 10.1109/T-ED.1983.21207 30, 764 (1983).
28. P. Pichler, Intrinsic Point Defects, Impurities, and their Diffusion in Silicon (Springer, Wien, 2004), p. 332.
29. J. Frühauf, " Surface dopant interactions in ultra-shallow junctions.," Ph.D. thesis, Technische Universität München, 2005; electronically available at http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de: bvb:91-diss20051219-2311438917.
30. J. Dabrowski, H. -J. Müssig, V. Zavodinsky, R. Baierle, and M. J. Caldas, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65.245305 65, 245305 (2002).
31. H. -H. Vuong, C. S. Rafferty, J. Ning, J. R. McMacken, J. McKinley, and D. A. Stevie, in Proceedings of SISPAD '98, edited by, K. De Meyer, and, S. Biesemans, (Springer, Wien, 1998), p. 380.
32. F. Lau, L. Mader, C. Mazure, Ch. Werner, and M. Orlowski, Appl. Phys. A: Solids Surf. 0721-7250 10.1007/BF00616992 49, 671 (1989).
33. K. Ravichandran and W. Windl, Appl. Phys. Lett. 0003-6951 10.1063/1.1900958 86, 152106 (2005).
34. W. Windl, Phys. Status Solidi B 0370-1972 10.1002/pssb.200404931 241, 2313 (2004).