Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

Applied Physics Letters

Volumn 92, Issue 26, 2008, Pages

  Parisini, A ^a   Morandi, V ^a   Solmi, S ^a   Merli, P G ^a   Giubertoni, D ^b   Bersani, M ^b   Van Den Berg, J A ^c  

^a CNR   (Italy)

^b ITC IRST   (Italy)

^c UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD MEASUREMENT; ELECTRON MICROSCOPY; LEAD; MATERIALS SCIENCE; SCANNING; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; DEPTH PROFILING; DOPANT DISTRIBUTIONS; QUANTITATIVE DETERMINATIONS; SUB-NANOMETER RESOLUTION; ULTRA SHALLOW JUNCTION (USJ); Z-CONTRAST SCANNING;

SILICON;

EID: 46649102479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951896     Document Type: Article

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