Erratum to "Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray fluorescence" [Spectrochim. Acta Part B 63 (2008) 1359-1364] (DOI:10.1016/j.sab.2008.10.005);Depth-profiling of vertical sidewall nanolayers on structured wafers by grazing incidence X-ray flourescence

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 63, Issue 12, 2008, Pages 1359-1364

  Honicke P ^a   Beckhoff, B ^a   Kolbe, M ^a   List, S ^b   Conard, T ^b   Struyff, H ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b IMEC   (Belgium)

Author keywords

GIXRF; Patterned wafer; Sidewall characterization; Synchrotron radiation; TXRF

Indexed keywords

ALIGNMENT; CHEMICAL SPECIATION; DEPTH PROFILING; SILICON NITRIDE; STORAGE RINGS; SYNCHROTRON RADIATION; X RAYS;

ELECTRON STORAGE RING; ELEMENTAL DEPTH PROFILING; GIXRF; NATIONAL METROLOGY INSTITUTES; PATTERNED WAFERS; PHYSIKALISCH-TECHNISCHE BUNDESANSTALT; TOTAL REFLECTION X-RAY FLUORESCENCE; TXRF;

SILICON WAFERS;

EID: 59349118296     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2009.01.001     Document Type: Erratum

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