Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium

AIP Conference Proceedings

Volumn 1173, Issue , 2009, Pages 45-49

  Giubertoni, D ^a   Pepponi, G ^a   Beckhoff, B ^b   Hoenicke, P ^b   Gennaro, S ^a   Meirer, F ^c   Ingerle, D ^c   Steinhauser, G ^c   Fried, M ^d   Petrik, P ^d   Parisini, A ^e   Reading, M A ^f   Streli, C ^c   Van Den Berg, J A ^f   Bersani, M ^a  

^a FONDAZIONE BRUNO KESSLER   (Italy)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c TU WIEN   (Austria)

^d WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^e CNR   (Italy)

^f UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Arsenic; Ellipsometry; GIXRF; MEIS; Silicon; SIMS; Ultra shallow junctions; Z contrast ADF STEM

Indexed keywords

EID: 70450228734     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3251258     Document Type: Conference Paper

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