Near-suface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 408-413

  Buyuklimanli, T H ^a   Magee, C W ^a   Marino, J W ^a   Walther, S R ^b  

^a EVANS ANALYTICAL GROUP   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILING; DOPANT DISTRIBUTION; PLASMA DOPING;

ION BOMBARDMENT; ION IMPLANTATION; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

SECONDARY ION MASS SPECTROMETRY;

EID: 31544451584     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2163879     Document Type: Article

References (13)

1. P. F. A. Alkemeda and Z. X. Jiang, J. Vac. Sci. Technol. B 19, 1699 (2001).
2. C. Tian and W. Vandervorst, J. Vac. Sci. Technol. B 15, 454 (1997).
3. C. W. Magee et al., J. Vac. Sci. Technol. B 16, 3099 (1998).
4. K. Wittmaack, Appl. Surf. Sci. 203/204, 20 (2003).
5. C. W. Magee et al., J. Vac. Sci. Technol. B 18, 489 (2000).
6. J. S. Wang et al., A. Cullis, Appl. Phys. Lett. 77, 3587 (2000).
7. K. Kimura et al., Curr. Appl. Phys. 3, 9 (2003).
8. W. Vandervorst et al., Appl. Surf. Sci. 203/204, 371 (2003).
9. M. G. Dowsett, Appl. Surf. Sci. 203/204, 5 (2003).
10. W. Vandervorst et al., Appl. Surf. Sci. 231/232, 619 (2004).
11. J. Bennett et al., SEMATECH round-robin B delta layers.
12. T. H. Büyüklimanli and J. W. Marino, Proceedings of the 15th International Conference on Secondary Ion Mass Spectrometry, 2005 (unpublished).
13. S. R. Walther, L. Godet, T. H. Büyüklimanli, and J. Weeman, J. Vac. Sci. Technol. B, these proceedings.