Influence of oxygen content and post-deposition annealing on structural and sensing characteristics of Tm2o3 thin membranes for ph detection

IEEE Sensors Journal

Volumn 10, Issue 5, 2010, Pages 1004-1011

  Pan, Tung Ming ^a   Lee, Cheng Da ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Electrolyteinsulatorsemiconductor (EIS) sensor; PH sensitivity; Tm 2o3 film

Indexed keywords

BUFFER SOLUTIONS; CRYSTALLOGRAPHIC ORIENTATIONS; DRIFT RATES; FLOW RATIOS; GROWTH CONDITIONS; HYSTERESIS VOLTAGE; INFLUENCE OF OXYGEN; INTERFACIAL LAYER; MORPHOLOGICAL FEATURES; OXYGEN CONTENT; OXYGEN FLOW RATIOS; PH DETECTION; PH SENSITIVITY; POST DEPOSITION ANNEALING; SENSING CHARACTERISTICS; SENSING MEMBRANES; SI (100) SUBSTRATE; THIN MEMBRANE; TM 2O3 FILM;

ARGON; ATOMIC SPECTROSCOPY; ELECTROCHEMICAL CORROSION; FILM PREPARATION; OXIDE FILMS; OXYGEN; PH SENSORS; SENSORS; SINGLE CRYSTALS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77950624929     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2009.2037016     Document Type: Article

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