PH sensitivity improvement on 8 nm thick hafnium oxide by post deposition annealing

Electrochemical and Solid-State Letters

Volumn 9, Issue 3, 2006, Pages

  Lai, Chao Sung ^a   Yang, Chia Ming ^a   Lu, Tseng Fu ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; PH; SILICON; SURFACE PROPERTIES;

BUFFER OXIDES; DISSOCIATION CONSTANTS; HAFNIUM OXIDE; POST DEPOSITION ANNEALING (PDA);

HAFNIUM COMPOUNDS;

EID: 31044451906     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2163550     Document Type: Article

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