A physical model for threshold voltage instability in Si3N4-Gate H+-sensitive FET's (pH ISFET's)

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1239-1245

  Jamasb, Shahriar ^a,b   Collins, Scott D ^a   Smith, Rosemary L ^a  

^a IBM   (United States)

^b University of California   (United States)

Author keywords

Drift; Hydration; Instability; Isfet's

Indexed keywords

CAPACITANCE; HYDRATION; SEMICONDUCTOR DEVICE MODELS; SILICA; SILICON NITRIDE;

ION SENSITIVE FIELD EFFECT TRANSISTORS (ISFET); THRESHOLD VOLTAGE INSTABILITY;

GATES (TRANSISTOR);

EID: 0032097792     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678525     Document Type: Article

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