Development of a high-k Pr2O3 sensing membrane for pH-ISFET application

IEEE Sensors Journal

Volumn 8, Issue 11, 2008, Pages 1856-1861

  Pan, Tung Ming ^a   Liao, Kao Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Annealed at 900 C; Drift rate; Electrolyte insulator semiconductor (EIS); Hysteresis; Interfacial SiO2 and Pr silicate formation; pH ISFET; Pr2O3; Sensing membrane; Sensitivity

Indexed keywords

DRIFT RATE; ELECTROLYTE-INSULATOR-SEMICONDUCTOR (EIS); INTERFACIAL SIO2 AND PR SILICATE FORMATION; PR2O3; SENSING MEMBRANE; SENSITIVITY;

AMORPHOUS FILMS; ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTRIC POTENTIAL; ELECTROCHEMICAL CORROSION; ELECTROLYSIS; ELECTROLYTES; ELECTROLYTIC CAPACITORS; HYSTERESIS; PH SENSORS; PHYSICAL VAPOR DEPOSITION; SILICATES; SILICON OXIDES; SURFACE ROUGHNESS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67650321311     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2008.2006259     Document Type: Article

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