Drift and hysteresis effects improved by RTA treatment on hafnium oxide in pH-sensitive applications

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Yang, Chia Ming ^a   Lai, Chao Sung ^a   Lu, Tseng Fu ^a   Wang, Ti Chuan ^a   Pijanowska, Dorota G ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF BIOCYBERNETICS AND BIOMEDICAL ENGINEERING   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCURRENCY CONTROL; ELASTICITY; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM COMPOUNDS; HYSTERESIS; OXIDES; PARAMETER ESTIMATION; PH; PH SENSORS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

CAPACITANCE-VOLTAGE MEASUREMENTS; DRIFT COEFFICIENT; ELECTROLYTE-INSULATOR-SEMICONDUCTOR; HAFNIUM OXIDE; HF O2 LAYER; HYSTERESIS EFFECTS; LAB VIEW; N2 AMBIENT; PH SENSING; PH-SENSITIVE; PH-SENSITIVITY; SENSING MEMBRANES;

PH EFFECTS;

EID: 52649112132     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2977720     Document Type: Article

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