Structure, luminescence and electrical properties of ZnO thin films annealed in H2 and H2O ambient: A comparative study

Thin Solid Films

Volumn 518, Issue 14, 2010, Pages 3923-3928

  Liu, W W ^a,b   Yao, B ^a   Li, Y F ^a,b   Li, B H ^a   Zhang, Z Z ^a   Shan, C X ^a   Zhao, D X ^a   Zhang, J Y ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Annealing; Electrical properties; Hydrogen; Optical properties; Water; Zinc oxide

Indexed keywords

ANNEALING TEMPERATURES; AS-GROWN; C-PLANE SAPPHIRE; COMPARATIVE STUDIES; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; ELECTRON CONCENTRATION; LUMINESCENCE BAND; P-TYPE DOPANT; P-TYPE DOPING; PHOTOLUMINESCENCE SPECTRUM; PL INTENSITY; PL SPECTRA; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; WATER VAPOUR; ZNO FILMS; ZNO THIN FILM;

ANNEALING; CRYSTAL GROWTH; DOPING (ADDITIVES); HYDROGEN; LUMINESCENCE; METALLIC FILMS; OPTICAL PROPERTIES; ZINC; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 77950524058     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.099     Document Type: Article

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