Lattice relaxation mechanism of ZnO thin films grown on c- Al 2O3 substrates by plasma-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Park, S H ^a   Hanada, T ^a,c   Oh, D C ^a,d   Minegishi, T ^a,c   Goto, H ^a   Fujimoto, G ^a   Park, J S ^a,c   Im, I H ^a,c   Chang, J H ^a,e   Cho, M W ^a,c   Yao, T ^a,c   Inaba, K ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b RIGAKU CORPORATION   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d Hoseo University   (South Korea)

^e Korea Maritime University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRON DIFFRACTION; FILM GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; THERMAL STRESS; ZINC OXIDE;

LATTICE MISFIT RELAXATION; MICROCRACK FORMATION; RESIDUAL TENSILE STRAIN;

THIN FILMS;

EID: 36849095464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2813021     Document Type: Article

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