Influence of PH3 preflow time on initial growth of GaP on Si substrates by metalorganic vapor phase epitaxy

IEICE Transactions on Electronics

Volumn E92-C, Issue 12, 2009, Pages 1443-1448

  Takano, Yasushi ^a   Okamoto, Takuya ^a   Takagi, Tatsuya ^a   Fuke, Shunro ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Defects; GaP on Si; Growth models; Metalorganic vapor phase epitaxy; Semiconducting III V compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; DEFECTS; DEPOSITION; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

GROWTH MODELS; GROWTH STAGES; INFLUENCE OF PH; ISLAND-LIKE STRUCTURES; LAYER STRUCTURES; PIT FORMATION; SEMICONDUCTING III-V COMPOUNDS; SI SUBSTRATES;

GALLIUM ALLOYS;

EID: 77950415954     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E92.C.1443     Document Type: Article

References (25)

1. Y. Furukawa, H. Yonezu, K. Ojima, K. Samonji, Y. Fujimoto, K. Momose, and K. Aiki, "Control of N content of GaPN grown by molecular beam epitaxy and growth of GaPN lattice matched to Si (100) substrate, " Jpn. J. Appl. Phys., vol. 41, no. 2 A, pp. 528-532, Feb. 2002. (Pubitemid 34750270)
2. Y. Fujimoto, H. Yonezu, A. Utsumi, K. Momose, and Y. Furukawa, "Dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well structure lattice-matched to a Si substrate, " Appl. Phys. Lett., vol. 79, no. 9, pp. 1306-1308, Aug. 2001.
3. Y. Furukawa, H. Yonezu, Y. Morisaki, S.-Y. Moon, S. Ishiji, and A. Wakahara, "Monolithic implementation of elemental devices for optoelectronic integrated circuit in lattice-matched Si/III-V-N alloy layers, " Jpn. J. Appl. Phys., vol. 45, nos.33-36, pp. L920-922, Sept. 2006. (Pubitemid 44411444)
4. Y. Furukawa, H. Yonezu, A. Wakahara, S. Ishiji, S. Y. Moon, and Y. Morisaki, "Growth of Si/III-V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits, " J. Cryst. Growth, vol. 300, no. 1, pp. 172-176, March 2007. (Pubitemid 46319116)
5. B. Kunert, S. Zinnkann, K. Volz, and W. Stolz, "Monolithic integration of Ga (NAsP)/(BGa) P multi-quantum well structures on (001) silicon substrates by MOVPE, " J. Cryst. Growth, vol. 310, no. 23, pp. 4776-4779, Nov. 2008.
6. Y. Takagi, H. Yonezu, K. Samonji, T. Tsuji, and N. Ohshima, "Generation and suppression pocess of crystalline defects in GaP layers grown on misoriented Si (100) substrates, " J. Cryst. Growth, vol. 187, no. 1, pp. 42-50, April 1998. (Pubitemid 128413817)
7. J. M. Olsen, M. M. Al-Jassim, A. Kibbler, and K. M. Jones, "MOCVD growth and characterization of GaP on Si, " J. Cryst. Growth, vol. 77, nos.1-3, pp. 515-523, 1986.
8. M. Sadeghi and S. Wang, "Growth of GaP on Si substrates by solid-source molecular beam epitaxy, " J. Cryst. Growth, vol. 227-228, pp. 279-283, July 2001.
9. S. J. Santana, C. R. Abernathy, S. J. Pearton, and K. S. Jones, "Initial growth stages of AlxGa1-xP on epitaxial silicon, " J. Cryst. Growth, vol. 164, nos.1-4, pp. 248-255, July 1996.
10. W. G. Bi, X. B. Mei, and C. W. Tu, "Growth studies of GaP on Si by gas-source molecular beam epitaxy, " J. Cryst. Growth, vol. 164, nos.1-4, pp. 256-262, July 1996. (Pubitemid 126357504)
11. V. Narayanan, S. Mahajan, N. Sukidi, K. J. Bachmann, V. Woods, and N. Dietz, "Oriented mediated self-assembled gallium phosphide islands grown on silicon, " Philos. Mag. A, vol. 80, no. 3, pp. 555-572, March 2000. (Pubitemid 35393515)
12. V. K. Dixit, T. Ganguli, T. K. Sharma, S. D. Singh, R. Kumar, S. Porwal, P. Tiwari, A. Ingale, and S. M. Oak, "Effect of two-step growth processon structural and optical and electrical properties of MOVPE-grown GaP/Si, " J. Cryst. Growth, vol. 310, no. 15, pp. 3428-3435, July 2008.
13. X. Liu, K. Kim, and D. E. Aspnes, "Initial stages of GaP heteroepitaxy on nanoscopically roughened (001) Si, " J. Vac. Sci. Technol. B, vol. 25, no. 4, pp. 1448-1452, July/Aug. 2007. (Pubitemid 47192139)
14. I. Németh, B. Kunert, W. Stolz, and K. Volz, "Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions, " J. Cryst. Growth, vol. 310, nos.7-9, pp. 1595-1601, April 2008.
15. T. Soga, T. Suzuki, M. Mori, T. Jimbo, and M. Umeno, "The effect of growth parameters on the initial growth of epitaxial growth of GaP on Si by metalorganic chemical vapor deposition, " J. Cryst. Growth, vol. 132, nos.1-2, pp. 134-140, Sept. 1993.
16. T. Soga, T. Jimbo, and M. Umeno, "Growth and characterization of two-dimensional GaP on Si by metalorganic chemical vapor deposition, " J. Cryst. Growth, vol. 146, nos.1-4, pp. 554-557, Jan. 1995.
17. T. Suzuki, M. Mori, Z. K. Jiang, T. Soga, T. Jimbo, and M. Umeno, "Tilt deformation of metalorganic chemical vapor deposition grown GaP on Si substrate, " Jpn. J. Appl. Phys., vol. 31, no. 7, pp. 2079-2084, July 1992.
18. Y. Takano, K. Morizumi, S. Watanabe, H. Masuda, T. Okamoto, K. Noda, S. Fukuda, T. Ozeki, K. Kuwahara, S. Fuke, Y. Furukawa, and H. Yonezu, "High-temperature growth of GaP on Si Substrates by metalorganic vapor phase epitaxy, " Jpn. J. Appl. Phys., vol. 48, no. 1, 011102, Jan. 2009.
19. L. Kipp, R. D. Bringans, D. K. Biegelsen, J. E. Northrup, A. Garcia, and L. E. Swartz, "Phosphine adsorption and decomposition on Si (100) 2×1 studied by STM, " Phys. Rev. B, vol. 52, no. 8, pp. 5843-5850, Aug. 1995.
20. D.-S. Lin, T.-S. Ku, and R.-P. Chen, "Interaction of phosphine with Si (100) from core-level photoemission and real-time scanning tunneling microscopy, " Phys. Rev. B, vol. 61, no. 4, pp. 2799-2805, Jan. 2000.
21. T. Hannappel, W. E. McMahon, and J. M. Olson, "An RDS, LEED, and STM study of MOCVD-prepared Si (100) surfaces, " J. Cryst. Growth, vol. 272, nos.1-4, pp. 24-29, Dec. 2004.
22. A. Ishizaka and Y. Shiraki, "Low temperature surface cleaning of silicon and its application to silicon MBE, " J. Electrochem. Soc, vol. 133, no. 4, pp. 666-671, April 1986.
23. F. Ernst and P. Pirouz, "The formation mechanism of planar defects in compound semiconductors grown epitaxially of {100} silicon substrates, " J. Mater. Res., vol. 4, no. 4, pp. 834-842, July/Aug. 1989.
24. K. Yamane, T. Kobayashi, Y. Furukawa, H. Okada, H. Yonezu, and A. Wakahara, "Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage, " J. Cryst. Growth, vol. 311, no. 3, pp. 794-797, Jan. 2009.
25. F. Bozso and P. Avouris, "Adsorption of phosphorus on Si (111): Structure and chemical activity, " Phys. Rev. B, vol. 43, no. 2, pp. 1847-1850, Jan. 1991.