Growth of Si/III-V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 172-176

  Furukawa, Y ^a   Yonezu, H ^a   Wakahara, A ^a   Ishiji, S ^a   Moon, S Y ^a   Morisaki, Y ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Growth models; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B2. Semiconducting silicon

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; OPTOELECTRONIC DEVICES;

GROWTH MODELS; MIGRATION-ENHANCED EPITAXY; SELF ANNIHILATION;

CRYSTAL STRUCTURE;

EID: 33847248853     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.021     Document Type: Article

References (12)

1. Hayashi I. Jpn. J. Appl. Phys. 32 (1993) 266
2. Kondow M., Uomi K., Hosomi K., and Mozume T. Jpn. J. Appl. Phys. 33 (1994) L1056
3. Li N.Y., Wong W.S., Tamich D.H., Kavanagh K.L., and Tu C.W. J. Vac. Sci. Technol. B 14 (1996) 2952
4. Momose K., Yonezu H., Fujimoto Y., Furukawa Y., Motomura Y., and Aiki K. Appl. Phys. Lett. 79 (2001) 4151
5. Takagi Y., Yonezu H., Samonji K., Tuji T., and Ohshima N. J. Crystal Growth 187 (1998) 42
6. Fujimoto Y., Yonezu H., Momose K., Utsumi A., and Furukawa Y. Appl. Phys. Lett. 79 (2001) 1306
7. Moon S.Y., Yonezu H., Furukawa Y., Kim S.M., Morita Y., and Wakahara A. Jpn. J. Appl. Phys. 44 (2005) 1752
8. Furukawa Y., Yonezu H., Wakahara A., Yoshizumi Y., Morita Y., and Sato A. Appl. Phys. Lett. 88 (2006) 142109
9. Ishizaka A., and Shiraki R. J. Electrochem. Soc. 133 (1986) 666
10. Shmidt W.G. Appl. Phys. A 75 (2002) 89
11. Pulci O., Schmidt W.G., and Bechstedt F. Phys. Status Solidi A 184 (2001) 105
12. Yonezu H. Semicond. Sci. Technol. 17 (2002) 762