An RDS, LEED, and STM Study of MOCVD-prepared Si(1 0 0) surfaces

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 24-29

  Hannappel, T ^a,b   McMahon, W E ^b   Olson, J M ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

A1. Adsorption; A1. Reflectance difference spectroscopy; A1. Scanning tunneling microscopy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials; B2. Semiconducting silicon

Indexed keywords

ABSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; BENCHMARKING; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM;

LOCAL DENSITY APPROXIMATION (LDA); REFLECTANCE DIFFERENCE SPECTROSCOPY; SEMICONDUCTING III-V MATERIALS; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 10044288541     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.043     Document Type: Conference Paper

References (23)

1. J.F. Geisz, D.J. Friedman, S. Kurtz, presented at the 29th IEEE Photovoltaic Specialists Conference 2002 (Cat. no. 02CH37361), New Orleans, LA, USA, 2002 (unpublished); J.F. Geisz, R.C. Reedy, B.M. Keyes, W.K. Metzger, J. Crystal Growth 259 (2003) 223.
2. J.F. Geisz, D.J. Friedman, S. Kurtz, presented at the 29th IEEE Photovoltaic Specialists Conference 2002 (Cat. no. 02CH37361), New Orleans, LA, USA, 2002 (unpublished); J.F. Geisz, R.C. Reedy, B.M. Keyes, W.K. Metzger, J. Crystal Growth 259 (2003) 223.
3. S. Neumann, A. Bakin, P. Veiling, W. Prost, H.-H. Wehmann, A. Schlachetzki, F.-J. Tegude, J. Crystal Growth 248 (2003) 380.
4. Z.T. Zhong, D.W. Wang, Y. Fan, C.F. Li, J. Vac. Sci. Technol. B 7 (1989) 1084;
5. R.I.G. Uhrberg, R.D. Bringans, R.Z. Bachrach, J.E. Northrup, J. Vac. Sci. Technol. A 4 (1986) 1259.
6. L. Kipp, D.K. Biegelsen, J.E. Northrup, L.-E. Swartz, R.D. Bringans, Phys. Rev. Lett. 76 (1996) 2810.
7. J. Wasserfall, W. Ranke, Surf. Sci. 315 (1994) 237.
8. R. Miotto, G.P. Srivastava, A.C. Ferraz, Phys. Rev. B 63 (2001) 125321;
9. Deng-Sung Lin, Tsai-Shuan Ku, Ru-Ping Chen, Phys. Rev. B 61 (2000) 2799;
10. D.-S. Lin, T.-S. Ku, T.-J. Sheu, Surf. Sci. 424 (1999) 7;
11. L. Kipp, R.D. Bringans, D.K. Biegelsen, J.E. Northrup, A. Garcia, L.-E. Swartz, Phys. Rev. B 52 (1995) 5843.
12. D.E. Aspnes, J.P. Harbison, A.A. Studna, LT. Florez, J. Vac. Sci. Technol. A 6 (1988) 1327.
13. P.R. Pukite, P.I. Cohen, Appl. Phys. Lett. 50 (1987) 1739;
14. R.S. Becker, T. Klitsner, J.S. Vickers, J. Microscopy 152 (1988) 157;
15. J. Wasserfall, W. Ranke, Surf. Sci. 331-333 (1995) 1099.
16. W.E. McMahon, J.M. Olson, J. Cryst. Growth 225 (2001) 410.
17. Y. Wang, X. Chen, R.J. Hamers, Phys. Rev. B 50 (1994) 4543;
18. L. Kipp, R.D. Bringans, D.K. Biegeisen, J.E. Northrup, A. Garcia, L.-E. Swartz, Phys. Rev. B 52 (1995) 5843;
19. D.-S. Lin, T.-S. Ku, R.-P. Chen, Phys. Rev. B 61 (2000) 2799.
20. A.G. Baboul, H.B. Schlegel, J. Am. Chem. Soc. 118 (1996) 8444;
21. Y. Wang, X. Chen, R.J. Hamers, Phys. Rev. B 50 (1994) 4534;
22. R.P. Elliott, Constitution of Binary Alloys: First Supplement, McGraw-Hill, New York, 1965;
23. A. Correia, P. Pichaud, A. Lhorte, J.B. Quoirin, J. Appl. Phys. 79 (1996) 2145.