Initial growth stages of AlxGa1-xP on epitaxial silicon

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 248-255

  Santana, C J ^a   Abernathy, C R ^a   Pearton, S J ^a   Jones, K S ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; DEPOSITION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BIMODAL DISTRIBUTIONS; ISLAND GROWTH; METALLORGANIC MOLECULAR BEAM EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030195013     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01058-0     Document Type: Article

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