High-temperature growth of GaP on Si substrates by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics

Volumn 48, Issue 1, 2009, Pages

  Takano, Yasushi ^a   Morizumi, Kenta ^a   Watanabe, Satoshi ^a   Masuda, Hiroyuki ^a   Okamoto, Takuya ^a   Noda, Kunihiro ^a   Fukuda, Shinya ^a   Ozeki, Tomokazu ^a   Kuwahara, Kazuhiro ^a   Fuke, Shunro ^a   Furukawa, Yuzo ^b   Yonezu, Hiroo ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTAL GROWTH; EPITAXIAL GROWTH; GROWTH (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

A DENSITIES; CROSS-SECTIONAL TEM; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES; GROWTH STAGES; HIGH-TEMPERATURE GROWTHS; ISLAND NUCLEATIONS; METAL-ORGANIC VAPOR PHASE EPITAXIES; MIRROR SURFACES; SI SUBSTRATES; TEM;

GALLIUM ALLOYS;

EID: 59649093444     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.011102     Document Type: Article

References (24)

1. Y. Furukawa, H. Yonezu, K. Ojima, K. Samonji, Y. Fujimoto, K. Momose, and K. Aiki: Jpn. J. Appl. Phys. 41 (2002) 528.
2. Y. Fujimoto, H. Yonezu, A. Utsumi, K. Momose, and Y. Furukawa: Appl. Phys. Lett. 79 (2001) 1306.
3. S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, and K. Onabe: J. Cryst. Growth 275 (2005) e1017.
4. G. Biwa, H. Yaguehi, K. Onabe, and Y. Shiraki: J. Cryst. Growth 189-190 (1998) 485.
5. H. P. Xin, R. J. Welty, Y. G. Hong, and C. W. Tu: J. Cryst. Growth 227-228 (2001) 558.
6. Y. Furukawa, H. Yonezu, Y. Morisaki, S.-Y. Moon, S. Ishiji, and A. Wakahara: Jpn. J. Appl. Phys. 45 (2006) L920.
7. Y. Furukawa, H. Yonezu, A. Wakahara, S. Ishiji, S. Y. Moon, and Y. Morisaki: J. Cryst. Growth 300 (2007) 172.
8. J. M. Olsen, M. M. Al-Jassim, A. Kibbler, and K. M. Jones: J. Cryst. Growth 77 (1986) 515.
9. M. Sadeghi and S. Wang: J. Cryst. Growth 227-228 (2001) 279.
10. S. J. Santana, C. R. Abernathy, S. J. Pearton, and K. S. Jones: J. Cryst. Growth 164 (1996) 248.
11. W. G. Bi, X. B. Mei, and C. W. Tu: J. Cryst. Growth 164 (1996) 256.
12. V. Narayanan, S. Mahajan, N. Sukidi, K. J. Bachmann, V. Woods, and N. Dietz: Philos. Mag. A 80 (2000) 555.
13. V. K. Dixit, T. Ganguli, T. K. Sharma, S. D. Singh, R. Kumar, S. Porwal, P. Tiwari, A. Ingale, and S. M. Oak: J. Cryst. Growth 310 (2008) 3428.
14. X. Liu, K. Kim, and D. E. Aspnes: J. Vac. Sci. Technol. B 25 (2007) 1448.
15. Y. Takagi, H. Yonezu, K. Samonji, T. Tsuji, and N. Ohshima: J. Cryst. Growth 187 (1998) 42.
16. T. Soga, T. Suzuki, M. Mori, T. Jimbo, and M. Umeno: J. Cryst. Growth 132 (1993) 134.
17. T. Soga, T. Jimbo, and M. Umeno: J. Cryst. Growth 146 (1995) 554.
18. T. Suzuki, M. Mori, Z. K. Jiang, T. Soga, T. Jimbo, and M. Umeno: Jpn. J. Appl. Phys. 31 (1992) 2079.
19. G. Timò, C. Flores, B. Bollani, D. Passoni, C. Bocchi, P. Franzosi, L. Lazzarini, and G. Salviati: J. Cryst. Growth 125 (1992) 440.
20. A. Ishizaka and Y. Shiraki: J. Electrochem. Soc. 133 (1986) 666.
21. A. C. Jones: J. Cryst. Growth 129 (1993) 728.
22. F. Ernst and P. Pirouz: J. Mater. Res. 4 (1989) 834.
23. S. F. Fang, K. Adomi, S. Iyer, H. Morkoç, H. Zabel, C. Choi, and N. Otsuka: J. Appl. Phys. 68 (1990) R31.
24. K. Asai, K. Fujita, and Y. Shiba: Jpn. J. Appl. Phys. 30 (1991) L1967.