Orientation mediated self-assembled gallium phosphide islands grown on silicon

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 80, Issue 3, 2000, Pages 555-572

  Narayanan, V ^a   Mahajan, S ^a   Sukidi, N ^b   Bachmann, K J ^b   Woods, Y ^c   Dietz, N ^c  

^a Arizona State University   (United States)

^b North Carolina State University   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; COALESCENCE; CRYSTAL ORIENTATION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH TEMPERATURE EFFECTS; INTERFACIAL ENERGY; MORPHOLOGY; NUCLEATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

ATOMIC MOBILITY; GALLIUM PHOSPHIDE; HETEROINTERFACES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INCUBATION; POLARIZED REFLECTANCE SPECTROSCOPY;

GALLIUM COMPOUNDS;

EID: 0034161029     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610008212068     Document Type: Article

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