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Volumn 310, Issue 15, 2008, Pages 3428-3435
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Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si
a
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Author keywords
A1. Characterization; A1. Defects; A1. Doping; A1. High resolution X ray diffraction; A3. Metal organic vapor phase epitaxy; B2. Semiconducting III V materials
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Indexed keywords
CHARGED PARTICLES;
CRYSTAL GROWTH;
ELECTRIC PROPERTIES;
ELECTRON BEAM LITHOGRAPHY;
ELECTRON MICROSCOPES;
ELECTRONS;
EPILAYERS;
EPITAXIAL GROWTH;
GALLIUM;
GALLIUM PHOSPHIDE;
METALLORGANIC VAPOR PHASE EPITAXY;
MICROSCOPES;
MOLECULAR BEAM EPITAXY;
NONMETALS;
ORGANOMETALLICS;
SCANNING;
SECONDARY EMISSION;
SEMICONDUCTOR QUANTUM WELLS;
SILICON;
SINGLE CRYSTALS;
STRUCTURAL PROPERTIES;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
(E ,3E) PROCESS;
(PL) PROPERTIES;
DISLOCATION DENSITIES;
ELECTRON DENSITIES;
EPI LAYERS;
EPILAYERS GROWN;
GALLIUM PHOSPHIDE (GAP);
HIGH RESOLUTION X RAY DIFFRACTION (HR XRD);
HIGH TEMPERATURE (HT);
METAL ORGANIC (MO);
OPTICAL AND ELECTRICAL PROPERTIES;
SCANNING ELECTRON MICROSCOPE (SEM);
SEM STUDIES;
SILICON (111) SUBSTRATES;
SINGLE STEP PROCESS;
SINGLE-CRYSTALLINE;
TWO STEP GROWTH;
TWO STEP PROCESSES;
V/III RATIO;
GALLIUM ALLOYS;
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EID: 46749126079
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.05.003 Document Type: Article |
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Times cited : (42)
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References (30)
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