DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT

Solid-State Electronics

Volumn 54, Issue 6, 2010, Pages 616-620

  Bawedin, M ^a   Uren, M J ^a   Udrea, F ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

1T DRAM; AlGaN; DRAM; GaN; HEMT; Hole gas; Hysteresis; Nitride; Parasitic; Schottky; Transient

Indexed keywords

ALGAN; DRAM; GAN; GAN HEMTS; HOLE GAS; SCHOTTKY;

DYNAMIC RANDOM ACCESS STORAGE; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HYSTERESIS; MAGNETIC PROSPECTING;

GASES;

EID: 77950369221     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.01.008     Document Type: Article

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