Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study

Solid-State Electronics

Volumn 52, Issue 11, 2008, Pages 1791-1795

  Vitanov, S ^a   Palankovski, V ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

81.05.Ea; 85.30.De; 85.30.Tv; Enhancement mode; HEMT; InGaN; Modeling; Simulation

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRICAL ENGINEERING; ELECTRON MOBILITY; GALLIUM NITRIDE;

81.05.EA; 85.30.DE; 85.30.TV; ENHANCEMENT MODE; HEMT; INGAN; MODELING; SIMULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 55049089266     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.07.011     Document Type: Article

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