Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 297-299

  Chu, Rongming ^a   Shen, Likum ^a   Fichtenbaum, Nicholas ^a   Brown, David ^a   Keller, Stacia ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

GaN; Leakage; Plasma treatment; Schottky

Indexed keywords

LEAKAGE CURRENTS; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE TREATMENT;

PLASMA TREATMENT; SCHOTTKY CONTACTS;

ELECTRIC CONTACTS;

EID: 41749103778     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917814     Document Type: Article

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