Validity of mobility universality for scaled metal-oxide-semiconductor field-effect transistors down to 100 nm gate length

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5228-5232

  Matsumoto, S ^a   Hisamitsu, K ^a   Tanaka, M ^a   Ueno, H ^a   Miura Mattausch, M ^a   Mattausch, H J ^a   Kumashiro, S ^b   Yamaguchi, T ^b   Odanaka, S ^b   Nakayama, N ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EQUATIONS; CHANNEL LENGTH; COMPACT MODEL; CONVENTIONAL METHODS; DRIFT-DIFFUSION APPROXIMATION; GATE LENGTH; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; POLY-SILICON DEPLETION EFFECT; QUANTUM MECHANICAL;

COMPUTER SIMULATION; ELECTRIC FIELDS; POLYSILICON;

MOSFET DEVICES;

EID: 18744388392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510957     Document Type: Article

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