A semiempirical surface scattering model for quantum corrected Monte Carlo simulation of strained Si-nMOSFETs

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 293-296

  Pham, A T ^a   Nguyen, C D ^a   Jungemann, C ^a   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; INTEGRATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; QUANTUM THEORY;

FIELD MOBILITY; PSEUDOMORPHIC GROWTH; SURFACE SCATTERING MODEL;

MOSFET DEVICES;

EID: 33751425381     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546643     Document Type: Conference Paper

References (13)

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