Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 459-462

  Irie, Hiroshi ^a   Kita, Koji ^a   Kyuno, Kentaro ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; MOSFET DEVICES; PHONONS; SCHEMATIC DIAGRAMS; THERMAL EFFECTS;

INVERSION LAYER MOBILITY; PHONON SCATTERING;

MOS DEVICES;

EID: 0842266598     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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